STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
880 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
113 nC @ 10 V
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 6,60
€ 6,60 Katrs (bez PVN)
€ 7,99
€ 7,99 Katrs (Ieskaitot PVN)
Standarts
1
€ 6,60
€ 6,60 Katrs (bez PVN)
€ 7,99
€ 7,99 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 6,60 |
| 10 - 99 | € 5,70 |
| 100 - 499 | € 4,55 |
| 500 - 999 | € 4,00 |
| 1000+ | € 3,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
880 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
113 nC @ 10 V
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products