STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 60,00
€ 1,20 Katrs (Tubina ir 50) (bez PVN)
€ 72,60
€ 1,452 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 60,00
€ 1,20 Katrs (Tubina ir 50) (bez PVN)
€ 72,60
€ 1,452 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 50 | € 1,20 | € 60,00 |
| 100 - 450 | € 0,937 | € 46,85 |
| 500 - 950 | € 0,794 | € 39,70 |
| 1000 - 4950 | € 0,663 | € 33,15 |
| 5000+ | € 0,624 | € 31,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products