STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

RS noliktavas nr.: 192-4661Ražotājs: STMicroelectronicsRažotāja kods: STP26N60DM6
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 172,50

€ 3,45 Katrs (Tubina ir 50) (bez PVN)

€ 208,72

€ 4,174 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

€ 172,50

€ 3,45 Katrs (Tubina ir 50) (bez PVN)

€ 208,72

€ 4,174 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
50 - 50€ 3,45€ 172,50
100 - 200€ 3,35€ 167,50
250 - 450€ 3,25€ 162,50
500 - 950€ 3,15€ 157,50
1000+€ 3,10€ 155,00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more