STMicroelectronics STripFET F7 N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL90N6F7
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 12,50
€ 1,25 Katrs (Paka ir 10) (bez PVN)
€ 15,12
€ 1,512 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 12,50
€ 1,25 Katrs (Paka ir 10) (bez PVN)
€ 15,12
€ 1,512 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 10 | € 1,25 | € 12,50 |
| 20+ | € 1,20 | € 12,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products