STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 8-Pin PowerFLAT 5 x 6 STL4N80K5

RS noliktavas nr.: 168-7111Ražotājs: STMicroelectronicsRažotāja kods: STL4N80K5
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

800 V

Package Type

PowerFLAT 5 x 6

Series

MDmesh K5, SuperMESH5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.35mm

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.4mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 300,00

€ 1,10 Katrs (Rulli ir 3000) (bez PVN)

€ 3 993,00

€ 1,331 Katrs (Rulli ir 3000) (Ieskaitot PVN)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 8-Pin PowerFLAT 5 x 6 STL4N80K5

€ 3 300,00

€ 1,10 Katrs (Rulli ir 3000) (bez PVN)

€ 3 993,00

€ 1,331 Katrs (Rulli ir 3000) (Ieskaitot PVN)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 8-Pin PowerFLAT 5 x 6 STL4N80K5
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

800 V

Package Type

PowerFLAT 5 x 6

Series

MDmesh K5, SuperMESH5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.35mm

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.4mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more