Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Produkta apraksts
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 117,50
€ 2,35 Katrs (Tubina ir 50) (bez PVN)
€ 142,18
€ 2,844 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 117,50
€ 2,35 Katrs (Tubina ir 50) (bez PVN)
€ 142,18
€ 2,844 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 2,35 | € 117,50 |
100 - 450 | € 1,95 | € 97,50 |
500 - 950 | € 1,90 | € 95,00 |
1000 - 4950 | € 1,85 | € 92,50 |
5000+ | € 1,80 | € 90,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Produkta apraksts