STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Series
SCTWA90N65G2V-4
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.024 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 984,00
€ 32,80 Katrs (Tubina ir 30) (bez PVN)
€ 1 190,64
€ 39,688 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 984,00
€ 32,80 Katrs (Tubina ir 30) (bez PVN)
€ 1 190,64
€ 39,688 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Series
SCTWA90N65G2V-4
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.024 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products