Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 9,32
€ 0,932 Katrs (Paka ir 10) (bez PVN)
€ 11,28
€ 1,128 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 9,32
€ 0,932 Katrs (Paka ir 10) (bez PVN)
€ 11,28
€ 1,128 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 10 | € 0,932 | € 9,32 |
20+ | € 0,886 | € 8,86 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.