Semikron Bridge Rectifier, 30A, 1200V, 4-Pin

RS noliktavas nr.: 305-5558Ražotājs: SemikronRažotāja kods: SKB 30/12 A1
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Tehniskie dokumenti

Specifikācija

Peak Average Forward Current

30A

Bridge Type

Single Phase

Peak Reverse Repetitive Voltage

1200V

Mounting Type

Chassis Mount

Package Type

G 12

Pin Count

4

Configuration

Single

Peak Non-Repetitive Forward Surge Current

370A

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Peak Forward Voltage

2.2V

Peak Reverse Current

5mA

Length

55mm

Dimensions

55 x 45 x 24mm

Height

24mm

Width

45mm

Produkta apraksts

MOSFETs - N-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

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IXYS Bridge Rectifier Module, 35A, 1600V, 4-Pin
€ 13,79Katrs (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams

P.O.A.

Semikron Bridge Rectifier, 30A, 1200V, 4-Pin

P.O.A.

Semikron Bridge Rectifier, 30A, 1200V, 4-Pin
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Jūs varētu interesēt
IXYS Bridge Rectifier Module, 35A, 1600V, 4-Pin
€ 13,79Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Peak Average Forward Current

30A

Bridge Type

Single Phase

Peak Reverse Repetitive Voltage

1200V

Mounting Type

Chassis Mount

Package Type

G 12

Pin Count

4

Configuration

Single

Peak Non-Repetitive Forward Surge Current

370A

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Peak Forward Voltage

2.2V

Peak Reverse Current

5mA

Length

55mm

Dimensions

55 x 45 x 24mm

Height

24mm

Width

45mm

Produkta apraksts

MOSFETs - N-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

Jūs varētu interesēt
IXYS Bridge Rectifier Module, 35A, 1600V, 4-Pin
€ 13,79Katrs (bez PVN)