Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Izcelsmes valsts
Thailand
Produkta apraksts
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 9,76
€ 0,651 Katrs (Paka ir 15) (bez PVN)
€ 11,81
€ 0,788 Katrs (Paka ir 15) (Ieskaitot PVN)
15
€ 9,76
€ 0,651 Katrs (Paka ir 15) (bez PVN)
€ 11,81
€ 0,788 Katrs (Paka ir 15) (Ieskaitot PVN)
15
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
15 - 360 | € 0,651 | € 9,76 |
375 - 735 | € 0,57 | € 8,55 |
750 - 1485 | € 0,556 | € 8,34 |
1500 - 2985 | € 0,54 | € 8,10 |
3000+ | € 0,53 | € 7,95 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Izcelsmes valsts
Thailand
Produkta apraksts