Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Produkta apraksts
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 28,90
€ 0,289 Katrs (tiek piegadats Rulli) (bez PVN)
€ 34,97
€ 0,35 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 28,90
€ 0,289 Katrs (tiek piegadats Rulli) (bez PVN)
€ 34,97
€ 0,35 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 180 | € 0,289 | € 5,78 |
200 - 480 | € 0,281 | € 5,62 |
500 - 980 | € 0,274 | € 5,48 |
1000+ | € 0,268 | € 5,36 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Produkta apraksts