Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.8mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Malaysia
€ 6,27
€ 0,627 Katrs (Paka ir 10) (bez PVN)
€ 7,59
€ 0,759 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 6,27
€ 0,627 Katrs (Paka ir 10) (bez PVN)
€ 7,59
€ 0,759 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,627 | € 6,27 |
100 - 240 | € 0,54 | € 5,40 |
250 - 490 | € 0,469 | € 4,69 |
500 - 990 | € 0,412 | € 4,12 |
1000+ | € 0,375 | € 3,75 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.8mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Malaysia