onsemi N-Channel MOSFET, 316 A, 40 V, 8-Pin DFN NVMFSC0D9N04CL

RS noliktavas nr.: 195-2672Ražotājs: onsemiRažotāja kods: NVMFSC0D9N04CL
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

316 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5.9mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Automotive Standard

AEC-Q101

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Noliktavas stāvoklis patreiz nav pieejams

€ 9 000,00

€ 3,00 Katrs (Rulli ir 3000) (bez PVN)

€ 10 890,00

€ 3,63 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 316 A, 40 V, 8-Pin DFN NVMFSC0D9N04CL

€ 9 000,00

€ 3,00 Katrs (Rulli ir 3000) (bez PVN)

€ 10 890,00

€ 3,63 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 316 A, 40 V, 8-Pin DFN NVMFSC0D9N04CL
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

316 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5.9mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more