Website Outage

Due to essential maintenance the website will be unavailable from 3am to 7am (GMT) Saturday 10th May. We apologise for any inconvenience.

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

RS noliktavas nr.: 780-4723Ražotājs: onsemiRažotāja kods: NTMS4177PR2G
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 4,23

€ 0,423 Katrs (Paka ir 10) (bez PVN)

€ 5,12

€ 0,512 Katrs (Paka ir 10) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Izvēlēties iepakojuma veidu

€ 4,23

€ 0,423 Katrs (Paka ir 10) (bez PVN)

€ 5,12

€ 0,512 Katrs (Paka ir 10) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more