Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 7,06
€ 0,706 Katrs (Paka ir 10) (bez PVN)
€ 8,54
€ 0,854 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 7,06
€ 0,706 Katrs (Paka ir 10) (bez PVN)
€ 8,54
€ 0,854 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts