onsemi P-Channel MOSFET, 8.4 A, 20 V, 3-Pin SOT-223 NTF6P02T3G

RS noliktavas nr.: 808-4138Ražotājs: onsemiRažotāja kods: NTF6P02T3G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

8.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.65mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 10,62

€ 0,531 Katrs (Paka ir 20) (bez PVN)

€ 12,85

€ 0,643 Katrs (Paka ir 20) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 8.4 A, 20 V, 3-Pin SOT-223 NTF6P02T3G
Izvēlēties iepakojuma veidu

€ 10,62

€ 0,531 Katrs (Paka ir 20) (bez PVN)

€ 12,85

€ 0,643 Katrs (Paka ir 20) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 8.4 A, 20 V, 3-Pin SOT-223 NTF6P02T3G

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
20 - 180€ 0,531€ 10,62
200 - 480€ 0,458€ 9,16
500+€ 0,398€ 7,96

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

8.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.65mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more