onsemi P-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 NTF2955T1G
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 21,00
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 25,41
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
20
€ 21,00
€ 1,05 Katrs (tiek piegadats Rulli) (bez PVN)
€ 25,41
€ 1,27 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 20 - 198 | € 1,05 | € 2,10 |
| 200+ | € 0,908 | € 1,82 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products