onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055-150T4G

RS noliktavas nr.: 802-1011PRažotājs: onsemiRažotāja kods: NTD3055-150T4G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

28.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.1 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,62

€ 0,345 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,43

€ 0,417 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055-150T4G
Izvēlēties iepakojuma veidu

€ 8,62

€ 0,345 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,43

€ 0,417 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055-150T4G
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Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

28.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.1 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more