Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
10 W
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal PNP Transistors, Up to 30V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 27,90
€ 0,465 Katrs (Tubina ir 60) (bez PVN)
€ 33,76
€ 0,563 Katrs (Tubina ir 60) (Ieskaitot PVN)
60
€ 27,90
€ 0,465 Katrs (Tubina ir 60) (bez PVN)
€ 33,76
€ 0,563 Katrs (Tubina ir 60) (Ieskaitot PVN)
60
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Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
10 W
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal PNP Transistors, Up to 30V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.