Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Package Type
PQFN4
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
8mm
Length
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
€ 5 100,00
€ 1,70 Katrs (Rulli ir 3000) (bez PVN)
€ 6 171,00
€ 2,057 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 5 100,00
€ 1,70 Katrs (Rulli ir 3000) (bez PVN)
€ 6 171,00
€ 2,057 Katrs (Rulli ir 3000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
3000
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Package Type
PQFN4
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
8mm
Length
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm