onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H

RS noliktavas nr.: 162-9318Ražotājs: onsemiRažotāja kods: ECH8310-TL-H
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

2.3mm

Length

2.9mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.9mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 185,00

€ 0,395 Katrs (Rulli ir 3000) (bez PVN)

€ 1 433,85

€ 0,478 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H

€ 1 185,00

€ 0,395 Katrs (Rulli ir 3000) (bez PVN)

€ 1 433,85

€ 0,478 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

2.3mm

Length

2.9mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.9mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more