Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
2.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 1 185,00
€ 0,395 Katrs (Rulli ir 3000) (bez PVN)
€ 1 433,85
€ 0,478 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1 185,00
€ 0,395 Katrs (Rulli ir 3000) (bez PVN)
€ 1 433,85
€ 0,478 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Noliktavas stāvoklis patreiz nav pieejams
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
2.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts