Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
45 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
€ 0,66
€ 0,66 Katrs (bez PVN)
€ 0,80
€ 0,80 Katrs (Ieskaitot PVN)
1
€ 0,66
€ 0,66 Katrs (bez PVN)
€ 0,80
€ 0,80 Katrs (Ieskaitot PVN)
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 9 | € 0,66 |
10 - 99 | € 0,57 |
100+ | € 0,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
45 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.