Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Length
2.9mm
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 29,90
€ 0,299 Katrs (tiek piegadats Rulli) (bez PVN)
€ 36,18
€ 0,362 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 29,90
€ 0,299 Katrs (tiek piegadats Rulli) (bez PVN)
€ 36,18
€ 0,362 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 225 | € 0,299 | € 7,48 |
250 - 475 | € 0,258 | € 6,45 |
500 - 975 | € 0,227 | € 5,68 |
1000+ | € 0,207 | € 5,18 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Length
2.9mm
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.