onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT3G

RS noliktavas nr.: 791-6025Ražotājs: onsemiRažotāja kods: 2N7002LT3G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 11,20

€ 0,056 Katrs (Paka ir 200) (bez PVN)

€ 13,55

€ 0,068 Katrs (Paka ir 200) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT3G
Izvēlēties iepakojuma veidu

€ 11,20

€ 0,056 Katrs (Paka ir 200) (bez PVN)

€ 13,55

€ 0,068 Katrs (Paka ir 200) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT3G

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
200 - 800€ 0,056€ 11,20
1000 - 1800€ 0,04€ 8,00
2000+€ 0,039€ 7,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt