Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
P.O.A.
Katrs (Paka ir 25) (bez PVN)
Standarts
25
P.O.A.
Katrs (Paka ir 25) (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm