Tehniskie dokumenti
Specifikācija
Brand
NXPTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SPT
Mounting Type
Through Hole
Pin Count
3
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Minimum Operating Temperature
-65 °C
Height
5.2mm
Dimensions
4.8 x 4.2 x 5.2mm
Maximum Operating Temperature
+150 °C
Length
4.8mm
Width
4.2mm
P.O.A.
Katrs (Paka ir 10) (bez PVN)
10
P.O.A.
Katrs (Paka ir 10) (bez PVN)
10
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Tehniskie dokumenti
Specifikācija
Brand
NXPTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SPT
Mounting Type
Through Hole
Pin Count
3
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Minimum Operating Temperature
-65 °C
Height
5.2mm
Dimensions
4.8 x 4.2 x 5.2mm
Maximum Operating Temperature
+150 °C
Length
4.8mm
Width
4.2mm