Nexperia PBSS4160DPN,115 Dual NPN/PNP Transistor, 1 A, 60 V, 6-Pin TSOP
Tehniskie dokumenti
Specifikācija
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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€ 5,52
€ 0,276 Katrs (Paka ir 20) (bez PVN)
€ 6,68
€ 0,334 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 5,52
€ 0,276 Katrs (Paka ir 20) (bez PVN)
€ 6,68
€ 0,334 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products