Nexperia N-Channel MOSFET, 26 A, 80 V, 4-Pin LFPAK33 BUK9M35-80EX

RS noliktavas nr.: 153-0640Ražotājs: NexperiaRažotāja kods: BUK9M35-80EX
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

80 V

Package Type

LFPAK33

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

62 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Number of Elements per Chip

1

Width

2.6mm

Length

3.4mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Automotive Standard

AEC-Q101

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Noliktavas stāvoklis patreiz nav pieejams

€ 18,52

€ 0,741 Katrs (Paka ir 25) (bez PVN)

€ 22,41

€ 0,897 Katrs (Paka ir 25) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 26 A, 80 V, 4-Pin LFPAK33 BUK9M35-80EX
Izvēlēties iepakojuma veidu

€ 18,52

€ 0,741 Katrs (Paka ir 25) (bez PVN)

€ 22,41

€ 0,897 Katrs (Paka ir 25) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 26 A, 80 V, 4-Pin LFPAK33 BUK9M35-80EX
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
25 - 100€ 0,741€ 18,52
125 - 225€ 0,546€ 13,65
250 - 600€ 0,525€ 13,12
625 - 1225€ 0,503€ 12,58
1250+€ 0,421€ 10,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

80 V

Package Type

LFPAK33

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

62 W

Transistor Configuration

Single

Maximum Gate Source Voltage

15 V

Number of Elements per Chip

1

Width

2.6mm

Length

3.4mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more