Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 0,84
€ 0,169 Katrs (Paka ir 5) (bez PVN)
€ 1,02
€ 0,204 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 0,84
€ 0,169 Katrs (Paka ir 5) (bez PVN)
€ 1,02
€ 0,204 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts