Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
23.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
5.7mm
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 480,00
€ 24,00 Katrs (Tubina ir 20) (bez PVN)
€ 580,80
€ 29,04 Katrs (Tubina ir 20) (Ieskaitot PVN)
20
€ 480,00
€ 24,00 Katrs (Tubina ir 20) (bez PVN)
€ 580,80
€ 29,04 Katrs (Tubina ir 20) (Ieskaitot PVN)
20
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Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
23.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
5.7mm
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS