IXYS HiperFET, Polar3 N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXFK150N30P3
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.13mm
Length
19.96mm
Typical Gate Charge @ Vgs
197 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
26.16mm
Izcelsmes valsts
United States
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 452,50
€ 18,10 Katrs (Tubina ir 25) (bez PVN)
€ 547,52
€ 21,901 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 452,50
€ 18,10 Katrs (Tubina ir 25) (bez PVN)
€ 547,52
€ 21,901 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.13mm
Length
19.96mm
Typical Gate Charge @ Vgs
197 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
26.16mm
Izcelsmes valsts
United States
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products