Tehniskie dokumenti
Specifikācija
Channel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Typical Gate Charge @ Vgs
10 nC @ 5 V
Width
1.4mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.01mm
P.O.A.
Katrs (Paka ir 5) (bez PVN)
5
P.O.A.
Katrs (Paka ir 5) (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams
5
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Channel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Typical Gate Charge @ Vgs
10 nC @ 5 V
Width
1.4mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.01mm