Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
€ 2,41
€ 0,241 Katrs (tiek piegadats Rulli) (bez PVN)
€ 2,92
€ 0,292 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 2,41
€ 0,241 Katrs (tiek piegadats Rulli) (bez PVN)
€ 2,92
€ 0,292 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0