Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0058 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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€ 16,00
€ 1,60 Katrs (tiek piegadats Rulli) (bez PVN)
€ 19,36
€ 1,936 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 16,00
€ 1,60 Katrs (tiek piegadats Rulli) (bez PVN)
€ 19,36
€ 1,936 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0058 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products