Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
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€ 5,49
€ 0,549 Katrs (Paka ir 10) (bez PVN)
€ 6,64
€ 0,664 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 5,49
€ 0,549 Katrs (Paka ir 10) (bez PVN)
€ 6,64
€ 0,664 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
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Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products