Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Series
StrongIRFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Produkta apraksts
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,10
€ 3,10 Katrs (bez PVN)
€ 3,75
€ 3,75 Katrs (Ieskaitot PVN)
Standarts
1
€ 3,10
€ 3,10 Katrs (bez PVN)
€ 3,75
€ 3,75 Katrs (Ieskaitot PVN)
Standarts
1
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Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 3,10 |
| 10 - 24 | € 2,95 |
| 25 - 49 | € 2,90 |
| 50 - 99 | € 2,70 |
| 100+ | € 2,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Series
StrongIRFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Produkta apraksts
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products