Infineon HEXFET N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
1.4mm
Number of Elements per Chip
1
Height
1.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 228,00
€ 0,076 Katrs (Rulli ir 3000) (bez PVN)
€ 275,88
€ 0,092 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 228,00
€ 0,076 Katrs (Rulli ir 3000) (bez PVN)
€ 275,88
€ 0,092 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
1.4mm
Number of Elements per Chip
1
Height
1.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products