Infineon HEXFET N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB IRFB3206PBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Height
9.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 62,50
€ 1,25 Katrs (Tubina ir 50) (bez PVN)
€ 75,62
€ 1,512 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 62,50
€ 1,25 Katrs (Tubina ir 50) (bez PVN)
€ 75,62
€ 1,512 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 50 | € 1,25 | € 62,50 |
| 100 - 200 | € 1,10 | € 55,00 |
| 250 - 450 | € 1,05 | € 52,50 |
| 500 - 950 | € 1,00 | € 50,00 |
| 1000+ | € 0,999 | € 49,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Height
9.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products