Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 14,00
€ 1,40 Katrs (Paka ir 10) (bez PVN)
€ 16,94
€ 1,694 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 14,00
€ 1,40 Katrs (Paka ir 10) (bez PVN)
€ 16,94
€ 1,694 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 1,40 | € 14,00 |
50 - 90 | € 1,30 | € 13,00 |
100 - 240 | € 1,25 | € 12,50 |
250 - 490 | € 1,20 | € 12,00 |
500+ | € 1,10 | € 11,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon