Infineon CoolMOS™ C6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1

RS noliktavas nr.: 753-3074Ražotājs: InfineonRažotāja kods: IPW60R190C6FKSA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ C6

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

16.13mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5.21mm

Height

21.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 4,15

€ 4,15 Katrs (bez PVN)

€ 5,02

€ 5,02 Katrs (Ieskaitot PVN)

Infineon CoolMOS™ C6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
Izvēlēties iepakojuma veidu

€ 4,15

€ 4,15 Katrs (bez PVN)

€ 5,02

€ 5,02 Katrs (Ieskaitot PVN)

Infineon CoolMOS™ C6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
Noliktavas stāvoklis patreiz nav pieejams
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1 - 9€ 4,15
10 - 24€ 3,95
25 - 49€ 3,80
50 - 99€ 3,60
100+€ 3,35

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ C6

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

16.13mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5.21mm

Height

21.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt