Infineon OptiMOS™ N-Channel MOSFET, 300 A, 30 V, 8-Pin HSOF-8 IPT004N03LATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
500 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
300 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
10.58mm
Length
10.1mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
2.4mm
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5 000,00
€ 2,50 Katrs (Rulli ir 2000) (bez PVN)
€ 6 050,00
€ 3,025 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 5 000,00
€ 2,50 Katrs (Rulli ir 2000) (bez PVN)
€ 6 050,00
€ 3,025 Katrs (Rulli ir 2000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2000
Noliktavas stāvoklis patreiz nav pieejams
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
500 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
300 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
10.58mm
Length
10.1mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
2.4mm
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products