Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

RS noliktavas nr.: 170-2269Ražotājs: InfineonRažotāja kods: IPP075N15N3GXKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 125,00

€ 2,50 Katrs (Tubina ir 50) (bez PVN)

€ 151,25

€ 3,025 Katrs (Tubina ir 50) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

€ 125,00

€ 2,50 Katrs (Tubina ir 50) (bez PVN)

€ 151,25

€ 3,025 Katrs (Tubina ir 50) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
50 - 50€ 2,50€ 125,00
100 - 200€ 2,35€ 117,50
250+€ 2,10€ 105,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more