Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm
€ 125,00
€ 2,50 Katrs (Tubina ir 50) (bez PVN)
€ 151,25
€ 3,025 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 125,00
€ 2,50 Katrs (Tubina ir 50) (bez PVN)
€ 151,25
€ 3,025 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 2,50 | € 125,00 |
100 - 200 | € 2,35 | € 117,50 |
250+ | € 2,10 | € 105,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm