Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
SuperSO8 5 x 6 Dual
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
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€ 3 130,00
€ 0,626 Katrs (Rulli ir 5000) (bez PVN)
€ 3 787,30
€ 0,757 Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 3 130,00
€ 0,626 Katrs (Rulli ir 5000) (bez PVN)
€ 3 787,30
€ 0,757 Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
SuperSO8 5 x 6 Dual
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products