Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 87,50
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 105,88
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 87,50
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 105,88
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 100 | € 1,75 | € 43,75 |
125 - 225 | € 1,70 | € 42,50 |
250 - 475 | € 1,60 | € 40,00 |
500+ | € 1,50 | € 37,50 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.