Infineon CoolSiC Silicon N-Channel MOSFET, 50 A, 650 V, 4-Pin TO-247-4 IMZA65R039M1HXKSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 9,70
€ 9,70 Katrs (bez PVN)
€ 11,74
€ 11,74 Katrs (Ieskaitot PVN)
Standarts
1
€ 9,70
€ 9,70 Katrs (bez PVN)
€ 11,74
€ 11,74 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 1 - 4 | € 9,70 |
| 5 - 9 | € 9,20 |
| 10 - 24 | € 8,90 |
| 25 - 49 | € 8,50 |
| 50+ | € 7,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products