Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1

RS noliktavas nr.: 284-729Ražotājs: InfineonRažotāja kods: IMT65R072M1HXUMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,00

€ 11,00 Katrs (bez PVN)

€ 13,31

€ 13,31 Katrs (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Izvēlēties iepakojuma veidu

€ 11,00

€ 11,00 Katrs (bez PVN)

€ 13,31

€ 13,31 Katrs (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

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1 - 9€ 11,00
10 - 99€ 9,90
100 - 499€ 9,10
500 - 999€ 8,50
1000+€ 7,60

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more