Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
PG-HSOF-8
Series
CoolSiC MOSFET 650 V G1
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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€ 12,70
€ 12,70 Katrs (bez PVN)
€ 15,37
€ 15,37 Katrs (Ieskaitot PVN)
Standarts
1
€ 12,70
€ 12,70 Katrs (bez PVN)
€ 15,37
€ 15,37 Katrs (Ieskaitot PVN)
Standarts
1
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| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 12,70 |
| 10 - 99 | € 11,40 |
| 100 - 499 | € 10,50 |
| 500 - 999 | € 9,80 |
| 1000+ | € 8,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
PG-HSOF-8
Series
CoolSiC MOSFET 650 V G1
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products