Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
1.8 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Maximum Power Dissipation
1800 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Izcelsmes valsts
Germany
Noliktavas stāvoklis patreiz nav pieejams
P.O.A.
Infineon FF1800XTR17T2P5PBPSA1 Half Bridge IGBT, 1.8 kA 1700 V, Screw Mount
1
P.O.A.
Infineon FF1800XTR17T2P5PBPSA1 Half Bridge IGBT, 1.8 kA 1700 V, Screw Mount
Noliktavas stāvoklis patreiz nav pieejams
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
1.8 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Maximum Power Dissipation
1800 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Izcelsmes valsts
Germany