Infineon OptiMOS™ N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 388,00
€ 0,388 Katrs (Rulli ir 1000) (bez PVN)
€ 469,48
€ 0,469 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 388,00
€ 0,388 Katrs (Rulli ir 1000) (bez PVN)
€ 469,48
€ 0,469 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 1000 - 1000 | € 0,388 | € 388,00 |
| 2000 - 2000 | € 0,368 | € 368,00 |
| 3000+ | € 0,346 | € 346,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products