Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1

RS noliktavas nr.: 349-378Ražotājs: InfineonRažotāja kods: AIMZH120R080M1TXKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,40

€ 11,40 Katrs (bez PVN)

€ 13,79

€ 13,79 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1

€ 11,40

€ 11,40 Katrs (bez PVN)

€ 13,79

€ 13,79 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more